10N60C DATASHEET PDF
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The transistor can be used in various po 1.
10N60C Datasheet PDF Fairchild Semiconductor –
The transistor can be used in various 1. Except as expressly permitted in this Agreement, Licensee shall not use, modify, copy or distribute the Content or Modifications. The following Sections of this Agreement shall survive the termination or expiration of this Agreement for any reason: The transistor can be used in various p 1. BOM, Gerber, user manual, schematic, test procedures, etc.
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These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Previously Viewed Products Select Product This latest technology has been especially designed to minimize on-state resistance h 1.
G E – very tight parameter distribution – high ruggedness, temperature stable behavior – low V CEsat – easy parallel switching capability due to positive 1.
(PDF) 10N60C Datasheet download
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In this Agreement, words importing a singular number only shall include the plural and vice versa, and section numbers and headings are for convenience of reference only and shall not affect the construction or interpretation hereof. This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Transistors are produced using planar stripe, DMOS technology. Please allow business days for a response.
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