BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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Application information Where application information is given, it is advisory and does not form part of the specification. Forward bias safe operating area. Typical collector-emitter saturation voltage.

BU2508DF Datasheet PDF

Typical base-emitter saturation voltage. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Budf philips semiconductors, budf datasheet.

Typical collector storage and fall time. C I Region of datasjeet DC operation. July 6 Rev 1. Typical DC current gain. Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. This data sheet contains target or goal specifications for product development.

Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications. High collectorbase voltagevcbov high speed switching. Buaf transistor equivalent substitute crossreference search.


Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope. Reproduction in whole or in part is prohibited without the prior bu208df consent of the copyright owner.

BUDF Datasheet PDF – Tiger Electronic

Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack. July 1 Rev 1. Exposure to limiting values for extended periods may affect device reliability. C 1 Turn-off current. No liability will be accepted by the publisher for any consequence of its use. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

Buaf datasheet, buaf dafasheet, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Silicon diffused power transistor buaf datasheet catalog. Publication thereof does not convey nor imply any license under patent or bu25008df industrial or intellectual property rights.


Npn triple diffused buaf planar silicon transistor color tv horizontal output applicationsno damper diode to3pml. SOT; The seating plane is electrically isolated from all terminals.

BUDF Datasheet PDF –

July 7 Rev 1. Buaf datasheet, equivalent, cross reference search. II Extension for repetitive pulse operation.

This data sheet contains final product specifications. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Refer to mounting instructions for F-pack envelopes.

July 5 Rev 1. Budf transistor equivalent substitute crossreference search.

July 2 Rev 1. Stress above one or more of the limiting values may cause permanent damage to the device. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.